Parallel Core−Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors

Quantum Mechanical Simulation for Ultra-thin High-k Gate Dielectrics Metal Oxide Semiconductor Field Effect Transistors

High-k dielectric materials are being considered as replacement for SiO2 as the gate dielectric while retaining the low equivalent oxide thickness (EOT) required next generation metal oxide semiconductor field effect transistors (MOSFETs). In this paper, we simulate the capacitance – voltage (C-V) of n-type MOSFET devices with different high-k dielectric insulator numerically. According to the ...

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high- k gate dielectric

Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors

In this paper, an analytical solution of the Poisson equation for double-gate metal-semiconductor-oxide field effect transistor (MOSFET) is presented, where explicit surface potential is derived so that the whole solution is fully analytical. Based on approximations of potential distribution, our solution scheme successfully takes the effect of doping concentration in each region. It provides a...

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...